ksc5305df ? npn silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com ksc5305df rev. a3 1 september 2009 ksc5305df npn silicon transistor features ? high voltage high speed power switch application ? built-in free-wheeling diode makes efficient anti saturation operation ? suitable for half bridge light ballast applications ? no need to interest an h fe value because of low variable storage-time spread even though corner spirit product ? low base drive requirement absolute maximum ratings t a =25 c unless otherwise noted thermal characteristics symbol parameter value units v cbo collector base voltage 800 v v ceo collector emi tter voltage 400 v v ebo emitter base voltage 12 v i c collector current (dc) 5 a i cp *collector current (pulse) 10 a i b base current (dc) 2 a i bp *base current (pulse) 4 a p c power dissipation (t c =25 c) 40 w t j junction temperature 150 c t stg storage temperature range -65 to +150 c symbol paramete rratingunits r jc thermal resistance, junction to case 3.125 c/w r ja thermal resistance, junction to ambient 69.5 c/w c b e equivalent circuit 1 1.base 2.collector 3.emitter to-220f
ksc5305df ? npn silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com ksc5305df rev. a3 2 electrical characteristics t a =25 c unless otherwise noted * pulse test : pulse width=5ms, duty cycles 10% symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =1ma, i e =0 800 - - v bv ceo collector-emitter breakdown voltage i c =5ma, i b =0 400 - - v bv ebo emitter cut-off current i e =1ma, i c =0 12 - - v i cbo collector cut-off current v cb =500v, i e =0 - - 10 a i ebo emitter cut-off current v eb = 9v, i c = 0 - - 10 a h fe1 h fe2 dc current gain v ce =1v, i c =0.8a v ce =1v,i c =2a 22 8 - - - - v ce (sat) collector-emitter saturation voltage i c =0.8a, i b =0.08a i c =2a, i b =0.4a - - - - 0.4 0.5 v v v be (sat) base-emitter sa turation voltage i c =0.8a, i b =0.08a i c =2a, i b =0.4a - - - - 1.0 1.0 v v c ob output capacitance v cb = 10v, f=1mhz - - 75 pf t on turn on time v cc =300v, i c =2a i b1 = 0.4a, i b2 =-1a r l = 150 -- 150ns t stg storage time - - 2 s t f fall time - - 0.2 s t stg storage time v cc =15v,v z =300v i c = 2a,i b1 = 0.4a i b2 = -0.4a, l c =200 h - - 2.25 s t f fall time - - 150 ns v f diode forward voltage i f = 1a i f = 2a - - - - 1.5 1.6 v v t rr * reverse recovery time (di/dt = 10a/ s) i f = 0.4a i f = 1a i f = 2a - - - 800 1.4 1.9 - - - ns s s
ksc5305df ? npn silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com ksc5305df rev. a3 3 typical performance characteristics figure 1. static characteristic figure 2. dc current gain figure 3. dc current gain figure 4. collector-emitter saturation voltage base-emitter saturation voltage figure 5. collector-emitter saturation voltage figure 6. base-emitter saturation voltage 012345678910 0 1 2 3 4 5 i b = 450ma i b = 500ma i b = 250ma i b = 150ma i b = 300ma i b = 350ma i b = 400ma i b = 200ma i b = 100ma i b = 50ma i b = 0 i c [a], collector current v ce [v], collector-emitter voltage 0.01 0.1 1 10 1 10 100 -25 o c 25 o c t a = 125 o c v ce = 1v h fe , dc current gain i c [a], collector current 0.01 0.1 1 10 1 10 100 -20 o c 25 o c t a = 125 o c v ce = 5v h fe , dc current gain i c [a], collector current 0.01 0.1 1 10 0.01 0.1 1 10 i c = 10 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [a], collector current 0.01 0.1 1 10 0.01 0.1 1 10 i c = 5i b -20 o c 25 o c t a = 125 o c v ce (sat)[v], saturation voltage i c [a], collector current 0.01 0.1 1 10 0.1 1 10 -20 o c 25 o c t a = 125 o c i c = 5i b v be (sat), saturation voltage i c [a], collector current
ksc5305df ? npn silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com ksc5305df rev. a3 4 typical performance characteristics figure 7. switching time figure 8. collector output capacitance figure 9. reverse recovery time figure 10. forward diode voltage figure 11. safe operating area figure 12. power derating 0.1 1 10 0.01 0.1 1 10 v cc = 300v i c = 5i b1 = -2.5i b2 t f t stg t stg , t f [ s], time i c [a], collector current 1 10 100 1 10 100 1000 f = 1mhz c ob [pf], capacitance v cb [v], collector-base voltage 1.0 1.5 2.0 0.8 1.0 1.2 1.4 1.6 trr[ s], reverse recovery time i f [a], forward current 0.01 0.1 1 10 0.1 1 10 v f [v], forward diode voltage i f [a], forward diode current 10 100 1000 0.01 0.1 1 10 100 10 s dc 1 s 5ms 1ms i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 p c [w], power dissipation t c [ o c], case temperature
ksc5305df ? npn silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com ksc5305df rev. a3 5 physical dimension (7.00) (0.70) max1.47 (30 ) #1 3.30 0.1 0 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.2 0 0.35 0.10 ?.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?.05 to-220f dimensions in millimeters
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